[B-6-1] Control of nitrogen profile in radical nitridation of SiO2 films.

Kazumasa Kawase、Hiroshi Umeda、Masao Inoue、Shimpei Tsujikawa、Yasuhiko Akamatsu、Akinobu Teramoto、Tadahiro Ohmi (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation、2.Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renesas Technology Corporation、3.Department of Electronic Engineering, Graduate School of Engineering, Tohoku Univ.、4.New Industry Creation Hatchery Center, Tohoku Univ.)

https://doi.org/10.7567/SSDM.2004.B-6-1