[B-8-4] Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films

Masato Koyama、Yuuichi Kamimuta、Masahiro Koike、Tsunehiro Ino、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2004.B-8-4