[B-9-2] Improvement of Contact Resistance of Ru electrode/TiN barrier at Ru/Crystalline-Ta2O5/Ru Capacitor for 50nm DRAM device

HanJin Lim、SukJin Chung、Kwanghee Lee、Jinil Lee、Jin Yong Kim、ChaYoung Yoo、SungTae Kim、Uin Chung、JooTae Moon (1.Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co.,Ltd.)

https://doi.org/10.7567/SSDM.2004.B-9-2