[B-9-2] Improvement of Contact Resistance of Ru electrode/TiN barrier at Ru/Crystalline-Ta2O5/Ru Capacitor for 50nm DRAM device

HanJin Lim, SukJin Chung, Kwanghee Lee, Jinil Lee, Jin Yong Kim, ChaYoung Yoo, SungTae Kim, Uin Chung, JooTae Moon (1.Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co.,Ltd.)

https://doi.org/10.7567/SSDM.2004.B-9-2