[C-10-3] Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO2

Minoru Ikeda, Georg Kresse, Toshihide Nabatame, Akira Toriumi (1.MIRAI, Association of Super-Advanced Electronics Technologies (ASET), 2.Institut fur Materialphysik, Univeisitat Wien, 3.MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technologies (AIST), 4.Department of Materials Science School of Engineering, University of Tokyo)

https://doi.org/10.7567/SSDM.2004.C-10-3