[C-8-2] Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI

Taizoh Sadoh, Ryo Matsuura, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao (1.Department of Electronics, Kyushu University, 2.SUMCO, 3.Fukuryo Semicon Engineering)

https://doi.org/10.7567/SSDM.2004.C-8-2