[C-8-2] Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI

Taizoh Sadoh、Ryo Matsuura、M. Ninomiya、M. Nakamae、T. Enokida、H. Hagino、M. Miyao (1.Department of Electronics, Kyushu University、2.SUMCO、3.Fukuryo Semicon Engineering)

https://doi.org/10.7567/SSDM.2004.C-8-2