[D-3-4] Thermally Stable Magnetic Tunnel Junctions for High Density MRAM

S. Ikegawa、N. Ishiwata、M. Nagamine、T. Nagase、K. Nishiyama、H. Katsumata、T. Mitsuzuka、N. Ooshima、H. Honjo、T. Ueda、T. Kishi、Y. Asao、K. Tsuchida、H. Hada、T. Sugibayashi、S. Tahara、H. Yoda (1.Corporate Research & Development Center, Toshiba Corporation、2.System Devices Research Laboratories, NEC Corporation、3.Corporate Manufacturing Engineering Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2004.D-3-4