[D-3-4] Thermally Stable Magnetic Tunnel Junctions for High Density MRAM

S. Ikegawa, N. Ishiwata, M. Nagamine, T. Nagase, K. Nishiyama, H. Katsumata, T. Mitsuzuka, N. Ooshima, H. Honjo, T. Ueda, T. Kishi, Y. Asao, K. Tsuchida, H. Hada, T. Sugibayashi, S. Tahara, H. Yoda (1.Corporate Research & Development Center, Toshiba Corporation, 2.System Devices Research Laboratories, NEC Corporation, 3.Corporate Manufacturing Engineering Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2004.D-3-4