[D-6-1] Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs

Daigo Kikuta、Ryohei Takaki、Junya Matsuda、Masaya Okada、Xin Wei、Jin-Ping Ao、Yasuo Ohno (1.Dept. of Electrical and Electronic Eng., The University of Tokushima、2.Satellite Venture Business Laboratory, The University of Tokushima)

https://doi.org/10.7567/SSDM.2004.D-6-1