[D-6-1] Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs

Daigo Kikuta, Ryohei Takaki, Junya Matsuda, Masaya Okada, Xin Wei, Jin-Ping Ao, Yasuo Ohno (1.Dept. of Electrical and Electronic Eng., The University of Tokushima, 2.Satellite Venture Business Laboratory, The University of Tokushima)

https://doi.org/10.7567/SSDM.2004.D-6-1