Characteristic comparision of GaN epitaxy grown on patterned and unpatterned Si(111)

Kyong-Jun Kim; In-Seok Seo; Cheul-Ro Lee

doi:https://doi.org/10.7567/SSDM.2004.D-8-2

[D-8-2] Characteristic comparision of GaN epitaxy grown on patterned and unpatterned Si(111)

Kyong-Jun Kim、In-Seok Seo、Cheul-Ro Lee (1.RCAMD, Research Center of Advanced Materials Department, School of Advanced Materials Engineering, Engineering College, Chonbuk National Universitｙ)

https://doi.org/10.7567/SSDM.2004.D-8-2

2004 International Conference on Solid State Devices and Materials

[D-8-2] Characteristic comparision of GaN epitaxy grown on patterned and unpatterned Si(111)