[D-8-4] Growth of Perfect Crack-Free GaN/Si(111) Epitaxy Using CBL and Superlattice

Dong-Wook Kim、In-Seok Seo、Kyong-Jun Kim、Kyong-Seok Chae、In-Hwan Lee、Yong-Jo Park、Cheul-Ro Lee (1.RCAMD Research Center of Advanced Materials Development, School of Advanced Materials Engineering, Engineering College, Chonbuk National University、2.Samsung Advanced Institute of Technology (SAIT))

https://doi.org/10.7567/SSDM.2004.D-8-4