The Japan Society of Applied Physics

[D-8-4] Growth of Perfect Crack-Free GaN/Si(111) Epitaxy Using CBL and Superlattice

Dong-Wook Kim, In-Seok Seo, Kyong-Jun Kim, Kyong-Seok Chae, In-Hwan Lee, Yong-Jo Park, Cheul-Ro Lee (1.RCAMD Research Center of Advanced Materials Development, School of Advanced Materials Engineering, Engineering College, Chonbuk National University, 2.Samsung Advanced Institute of Technology (SAIT))

https://doi.org/10.7567/SSDM.2004.D-8-4