Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers

Mitsuaki Shimizu; Yoshitaka Hirata; Guanxi Piao; Hajime Okumura

doi:https://doi.org/10.7567/SSDM.2004.D-8-5

[D-8-5] Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers

Mitsuaki Shimizu、Yoshitaka Hirata、Guanxi Piao、Hajime Okumura (1.Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology、2.Department of Science and Technology, Graduated School of Meiji University)

https://doi.org/10.7567/SSDM.2004.D-8-5

2004 International Conference on Solid State Devices and Materials

[D-8-5] Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers