Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)

Takeshi Yamaguchi; Izumi Hirano; Katsuyuki Sekine; Seiji Inumiya; Kazuhiro Eguchi; Mariko Takayanagi; Noburu Fukushima

doi:https://doi.org/10.7567/SSDM.2004.E-2-5

[E-2-5] Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)

Takeshi Yamaguchi, Izumi Hirano, Katsuyuki Sekine, Seiji Inumiya, Kazuhiro Eguchi, Mariko Takayanagi, Noburu Fukushima (1.Advanced LSI Technology Laboratory, 2.Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2004.E-2-5

2004 International Conference on Solid State Devices and Materials

[E-2-5] Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)