[E-2-5] Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)

Takeshi Yamaguchi、Izumi Hirano、Katsuyuki Sekine、Seiji Inumiya、Kazuhiro Eguchi、Mariko Takayanagi、Noburu Fukushima (1.Advanced LSI Technology Laboratory、2.Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2004.E-2-5