[F-1-2] Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well ( λ=1.28-1.45 μm) with GaAsP strain-compensated layer

Y. H. Chang、H. C. Kuo、Y. A. Chang、M. Y. Tsai、S. C. Wang、N. Tansu、Jeng-Ya Yeh、Luke J. Mawst (1.Insititue of Electro-Optical Engineering, Nation Ciao-Tong University、2.Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University、3.Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison)

https://doi.org/10.7567/SSDM.2004.F-1-2