[F-1-2] Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well ( λ=1.28-1.45 μm) with GaAsP strain-compensated layer

Y. H. Chang, H. C. Kuo, Y. A. Chang, M. Y. Tsai, S. C. Wang, N. Tansu, Jeng-Ya Yeh, Luke J. Mawst (1.Insititue of Electro-Optical Engineering, Nation Ciao-Tong University, 2.Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, 3.Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison)

https://doi.org/10.7567/SSDM.2004.F-1-2