The Japan Society of Applied Physics

[G-4-2] Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

Toshiki Makimoto, Yoshiharu Yamauchi, Takatoshi Kido, Kazuhide Kumakura, Yoshitaka Taniyasu, Makoto Kasu, Nobuo Matsumoto (1.NTT Basic Research Laboratories, NTT Corporation, 2.NEL TechnoSupport, 3.Shonan Institute of Technology)

https://doi.org/10.7567/SSDM.2004.G-4-2