Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

Toshiki Makimoto; Yoshiharu Yamauchi; Takatoshi Kido; Kazuhide Kumakura; Yoshitaka Taniyasu; Makoto Kasu; Nobuo Matsumoto

doi:https://doi.org/10.7567/SSDM.2004.G-4-2

[G-4-2] Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

Toshiki Makimoto、Yoshiharu Yamauchi、Takatoshi Kido、Kazuhide Kumakura、Yoshitaka Taniyasu、Makoto Kasu、Nobuo Matsumoto (1.NTT Basic Research Laboratories, NTT Corporation、2.NEL TechnoSupport、3.Shonan Institute of Technology)

https://doi.org/10.7567/SSDM.2004.G-4-2

2004 International Conference on Solid State Devices and Materials

[G-4-2] Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates