Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

Toshiki Makimoto; Yoshiharu Yamauchi; Takatoshi Kido; Kazuhide Kumakura; Yoshitaka Taniyasu; Makoto Kasu; Nobuo Matsumoto

doi:https://doi.org/10.7567/SSDM.2004.G-4-2

[G-4-2] Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

Toshiki Makimoto, Yoshiharu Yamauchi, Takatoshi Kido, Kazuhide Kumakura, Yoshitaka Taniyasu, Makoto Kasu, Nobuo Matsumoto (1.NTT Basic Research Laboratories, NTT Corporation, 2.NEL TechnoSupport, 3.Shonan Institute of Technology)

https://doi.org/10.7567/SSDM.2004.G-4-2

2004 International Conference on Solid State Devices and Materials

[G-4-2] Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates