Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation

Narihiko Maeda; Takashi Makimura; Chengxin Wang; Masanobu Hiroki; Toshiki Makimoto; Takashi Kobayashi; Takatomo Enoki

doi:https://doi.org/10.7567/SSDM.2004.G-4-3

[G-4-3] Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation

Narihiko Maeda, Takashi Makimura, Chengxin Wang, Masanobu Hiroki, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki (1.NTT Photonics Laboratories, 2.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2004.G-4-3

2004 International Conference on Solid State Devices and Materials

[G-4-3] Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation