Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation

Narihiko Maeda; Takashi Makimura; Chengxin Wang; Masanobu Hiroki; Toshiki Makimoto; Takashi Kobayashi; Takatomo Enoki

doi:https://doi.org/10.7567/SSDM.2004.G-4-3

[G-4-3] Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation

Narihiko Maeda、Takashi Makimura、Chengxin Wang、Masanobu Hiroki、Toshiki Makimoto、Takashi Kobayashi、Takatomo Enoki (1.NTT Photonics Laboratories、2.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2004.G-4-3

2004 International Conference on Solid State Devices and Materials

[G-4-3] Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation