94-GHz fT, 0.4-dB NFmin HBT with Optimized Si-cap and Extrinsic Base using Blanket SiGeC Epitaxy for Consumer Wireless Applications

Yukihiro Kiyota; Hideo Yamagata; Masaaki Bairo; Syusaku Yanagawa; Takeyoshi Komoto; Masato Oishi; Chihiro Arai

doi:https://doi.org/10.7567/SSDM.2004.G-4-4L

[G-4-4L] 94-GHz fT, 0.4-dB NFmin HBT with Optimized Si-cap and Extrinsic Base using Blanket SiGeC Epitaxy for Consumer Wireless Applications

Yukihiro Kiyota、Hideo Yamagata、Masaaki Bairo、Syusaku Yanagawa、Takeyoshi Komoto、Masato Oishi、Chihiro Arai (1.SONY Corporation, Semiconductor Solutions Network Company、2.SONY Semiconductor Kyusyu)

https://doi.org/10.7567/SSDM.2004.G-4-4L

2004 International Conference on Solid State Devices and Materials

[G-4-4L] 94-GHz fT, 0.4-dB NFmin HBT with Optimized Si-cap and Extrinsic Base using Blanket SiGeC Epitaxy for Consumer Wireless Applications