94-GHz fT, 0.4-dB NFmin HBT with Optimized Si-cap and Extrinsic Base using Blanket SiGeC Epitaxy for Consumer Wireless Applications

Yukihiro Kiyota; Hideo Yamagata; Masaaki Bairo; Syusaku Yanagawa; Takeyoshi Komoto; Masato Oishi; Chihiro Arai

doi:https://doi.org/10.7567/SSDM.2004.G-4-4L

[G-4-4L] 94-GHz fT, 0.4-dB NFmin HBT with Optimized Si-cap and Extrinsic Base using Blanket SiGeC Epitaxy for Consumer Wireless Applications

Yukihiro Kiyota, Hideo Yamagata, Masaaki Bairo, Syusaku Yanagawa, Takeyoshi Komoto, Masato Oishi, Chihiro Arai (1.SONY Corporation, Semiconductor Solutions Network Company, 2.SONY Semiconductor Kyusyu)

https://doi.org/10.7567/SSDM.2004.G-4-4L

2004 International Conference on Solid State Devices and Materials

[G-4-4L] 94-GHz fT, 0.4-dB NFmin HBT with Optimized Si-cap and Extrinsic Base using Blanket SiGeC Epitaxy for Consumer Wireless Applications