Cross-Sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates

Isao Tamai; Taketomo Sato; Hideki Hasegawa

doi:https://doi.org/10.7567/SSDM.2004.G-7-2

[G-7-2] Cross-Sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates

Isao Tamai、Taketomo Sato、Hideki Hasegawa (1.Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University)

https://doi.org/10.7567/SSDM.2004.G-7-2

2004 International Conference on Solid State Devices and Materials

[G-7-2] Cross-Sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates