[P10-3] Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure

Dae-Hwan Kang、Tae-Gyun Kim、Han-Ju Jung、Taek Sung Lee、In Ho Kim、Kyeong Seok Lee、Won Mok Kim、Byung-ki Cheong、Dong-Ho Ahn、Min-Ho Kwon、Hyuk-Soon Kwon、Ki-Bum Kim (1.Thin Film Materials Research Center, Korea Institute of Science and Technology、2.School of Materials Science and Engineering, Seoul National University)

https://doi.org/10.7567/SSDM.2004.P10-3