[P10-3] Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure

Dae-Hwan Kang, Tae-Gyun Kim, Han-Ju Jung, Taek Sung Lee, In Ho Kim, Kyeong Seok Lee, Won Mok Kim, Byung-ki Cheong, Dong-Ho Ahn, Min-Ho Kwon, Hyuk-Soon Kwon, Ki-Bum Kim (1.Thin Film Materials Research Center, Korea Institute of Science and Technology, 2.School of Materials Science and Engineering, Seoul National University)

https://doi.org/10.7567/SSDM.2004.P10-3