Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al2O3/Si3N4 bilayer and with Si3N4 single layer

Chengxin WANG; Narihiko MAEDA; Masanobu HIROKI; Takehiko TAWARA; Tadashi SAITOH; Toshiki MAKIMOTO; Takashi KOBAYASHI; Takotomo ENOKI

doi:https://doi.org/10.7567/SSDM.2004.P11-1

[P11-1] Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al2O3/Si3N4 bilayer and with Si3N4 single layer

Chengxin WANG、Narihiko MAEDA、Masanobu HIROKI、Takehiko TAWARA、Tadashi SAITOH、Toshiki MAKIMOTO、Takashi KOBAYASHI、Takotomo ENOKI (1.NTT Photonics Laboratories, NTT Corporation、2.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2004.P11-1

2004 International Conference on Solid State Devices and Materials

[P11-1] Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al2O3/Si3N4 bilayer and with Si3N4 single layer