Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al2O3/Si3N4 bilayer and with Si3N4 single layer

Chengxin WANG; Narihiko MAEDA; Masanobu HIROKI; Takehiko TAWARA; Tadashi SAITOH; Toshiki MAKIMOTO; Takashi KOBAYASHI; Takotomo ENOKI

doi:https://doi.org/10.7567/SSDM.2004.P11-1

[P11-1] Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al2O3/Si3N4 bilayer and with Si3N4 single layer

Chengxin WANG, Narihiko MAEDA, Masanobu HIROKI, Takehiko TAWARA, Tadashi SAITOH, Toshiki MAKIMOTO, Takashi KOBAYASHI, Takotomo ENOKI (1.NTT Photonics Laboratories, NTT Corporation, 2.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2004.P11-1

2004 International Conference on Solid State Devices and Materials

[P11-1] Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al2O3/Si3N4 bilayer and with Si3N4 single layer