[P11-6L] Enhancement of breakdown voltage in AlGaN/GaN HEMTs using AlN buffer layer thickness on 4-inch Silicon

S. ARULKUMARAN、T. EGAWA、H. ISHIKAWA (1.Research Center for Nano-Device and System, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.2004.P11-6L