Depth Profile Prediction on Low Energy Boron Implantation Process by Tight-Binding Quantum Chemical Molecular Dynamics

Hideyuki Tsuboi; Ai Sagawa; Hideki Iga; Katsumi Sasata; Michihisa Koyama; Momoji Kubo; Hidehiko Yabuhara; Akira Miyamoto

doi:https://doi.org/10.7567/SSDM.2004.P3-17

[P3-17] Depth Profile Prediction on Low Energy Boron Implantation Process by Tight-Binding Quantum Chemical Molecular Dynamics

Hideyuki Tsuboi、Ai Sagawa、Hideki Iga、Katsumi Sasata、Michihisa Koyama、Momoji Kubo、Hidehiko Yabuhara、Akira Miyamoto (1.New Industry Creation Hatchery Center, Tohoku University、2.Department of Applied Chemistry, Graduate School of Engineering, Tohoku University、3.PRESTO, Japan Science and Technology Agency、4.Corporate Manufacturing Engineering Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2004.P3-17

2004 International Conference on Solid State Devices and Materials

[P3-17] Depth Profile Prediction on Low Energy Boron Implantation Process by Tight-Binding Quantum Chemical Molecular Dynamics