Electron Transport Model for Strained Silicon-Carbon Alloy

S. T. Chang; C. Y. Lin

doi:https://doi.org/10.7567/SSDM.2004.P3-3

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜 2004年9月17日
Tower Hall Funabori, Tokyo, Japan

[P3-3] Electron Transport Model for Strained Silicon-Carbon Alloy

S. T. Chang、C. Y. Lin (1.Department of Electronic Engineering, Chung Yuan Christian University、2.Department of Physics, National Chung Hsing University)

https://doi.org/10.7567/SSDM.2004.P3-3

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