Mobility Enhancement of MOSFETs on p-Silicon (111) with In-situ HF-Vapor Pre-Gate Oxide Cleaning

T. S. Chao; Y. H. Lin; W. L. Yang

doi:https://doi.org/10.7567/SSDM.2004.P5-1

[P5-1] Mobility Enhancement of MOSFETs on p-Silicon (111) with In-situ HF-Vapor Pre-Gate Oxide Cleaning

T. S. Chao、Y. H. Lin、W. L. Yang (1.Department of Electrophysics, National Chiao Tung University、2.National Nano Device Labs、3.Department of Electrical Engineering, Feng Chia University、4.Department of Electronic Engineering, Feng Chia University)

https://doi.org/10.7567/SSDM.2004.P5-1

2004 International Conference on Solid State Devices and Materials

[P5-1] Mobility Enhancement of MOSFETs on p-Silicon (111) with In-situ HF-Vapor Pre-Gate Oxide Cleaning