[P5-12] Post-deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors

M. Sasagawa、K. Kita、K. Kyuno、A. Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

https://doi.org/10.7567/SSDM.2004.P5-12