[P5-14] Effect of Hf metal predeposition on the electrical properties of HfO2 films on tensile strained Si0.9954C0.0046 layer

Y. S. Liu, S. Maikap, P. S. Chen, K. C. Liu (1.Department of Electronics Engineering, Chang Gung University, 2.Department of Electrical Engineering and Graduate Institute of Electronic Engineering, NTU, 3.ERSO/ITRI)

https://doi.org/10.7567/SSDM.2004.P5-14