[P5-15] Influence of Thermal Annealing on Chemical Structure of Lanthanum oxide/Si Interfacial Transition Layer

H. Nohira, T. Yoshida, H. Okamoto, S. Shinagawa, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Ng Jin Aun, Y. Kobayashi, S. Ohmi, H. Iwai, Y. Takata, K. Kobayashi, T. Hattori (1.Department of Electrical & Electronic Engineering, Musashi Institute of Technology, 2.Department of Engineering Physics and Mechanics, Kyoto University, 3.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4.Frontier Collaborative Research Center, Tokyo Institute of Technology, 5.RIKEN/SPring-8, 6.JASRI/SPring-8)

https://doi.org/10.7567/SSDM.2004.P5-15