[P5-5] Analysis of dislocations in strained-Si/SiGe devices by EBIC technique

Yoshihiro Anan、Nobuyuki Sugii、Yoshinobu Kimura、Mari Nozoe (1.Central Research Laboratory, Hitachi, Ltd.、2.Hitachi High-Technologies Corpration)

https://doi.org/10.7567/SSDM.2004.P5-5