Nitride-based light emitting diode and photodetector dual function Devices with InGaN/GaN multiple quantum well structures

Y. D. Jhou; C. H. Chen; S. J. Chang; Y. K. Su; P. C. Chang; P. C. Chen; H. Hung; S. M. Wang; C. L. Yu

doi:https://doi.org/10.7567/SSDM.2004.P6-1

[P6-1] Nitride-based light emitting diode and photodetector dual function Devices with InGaN/GaN multiple quantum well structures

Y. D. Jhou、C. H. Chen、S. J. Chang、Y. K. Su、P. C. Chang、P. C. Chen、H. Hung、S. M. Wang、C. L. Yu (1.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University、2.Department of Electrical Engineering Cheng Shiu University、3.Department of Electronic Engineering, Nan Jeon Institute of Technology)

https://doi.org/10.7567/SSDM.2004.P6-1

2004 International Conference on Solid State Devices and Materials

[P6-1] Nitride-based light emitting diode and photodetector dual function Devices with InGaN/GaN multiple quantum well structures