[P6-2] Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion

Kwang-Su Ryu、Jin-Woo Ju、A. S. Fedorov、Cheul-Ro Lee、In-Hwan Lee、Ki-Ho Park、Young-Hee Lee、Je-Won Kim (1.School of Advanced Materials Engineering and Research Institute of Advanced Materials Development, Chonbuk National University、2.Sysnex Co., Ltd.、3.Photonic Device Lab. Samsung Electro-Mechanics Co.)

https://doi.org/10.7567/SSDM.2004.P6-2