[P6-4] Characteristics of Pt/Schottky Diode s fabricated on the Cracked GaN Epitaxial Layer on (111) Silicon

Sung-Jong Park、Yong-Woon Choi、Heon-Bok Lee、Wang Lian Shan、Soo-Jin Chua、Jung-Hee Lee、Sung-Ho Hahm (1.School of Electrical and Computer Engineering, Kyungpook National University、2.Institute of Materials Research and Engineering, Singapore、3.Department of Electrical and Computer Engineering, National University of Singapore, Singapore.)

https://doi.org/10.7567/SSDM.2004.P6-4