Nitride-based light emitting diodes with nanostructured silicon contact layers

C. H. Kuo; S. J. Chang

doi:https://doi.org/10.7567/SSDM.2004.P6-5L

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜 2004年9月17日
Tower Hall Funabori, Tokyo, Japan

[P6-5L] Nitride-based light emitting diodes with nanostructured silicon contact layers

C. H. Kuo、S. J. Chang (1.South Epitaxy Corporation、2.Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University)

https://doi.org/10.7567/SSDM.2004.P6-5L

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