[P6-7L] Improvement in Performance of AlGaN/GaN HFETs by Utilizing a Low-Temperature GaN Cap Layer

Eiji Waki、Tadayoshi Deguchi、Satoru Ono、Atsushi Nakagawa、Hiroyasu Ishikawa、Takashi Egawa (1.Research Laboratory, New Japan Radio Co., Ltd.、2.Research Center for Nano-Device and System, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.2004.P6-7L