[P7-4] Characteristics of back illumination type UV photodetector fabricated by AlxGa1-xN heterostructure

Kyong-Seok Chae、Dong-Wook Kim、Hyung-Seok Han、In-Hwan Lee、Yong-Jo Park、Cheul-Ro Lee (1.RCAMD, Research Center of Advanced Materials Development, School of Advanced Materials Engineering, Engineering College, Chonbuk National University、2.Samsung Advanced Institute of Technology (SAIT))

https://doi.org/10.7567/SSDM.2004.P7-4