Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process

So Watanabe; Motoki Maeda; Tsuyoshi Sugisaki; Kazuo Tsutsui

doi:https://doi.org/10.7567/SSDM.2004.P8-10L

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜 2004年9月17日
Tower Hall Funabori, Tokyo, Japan

[P8-10L] Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process

So Watanabe、Motoki Maeda、Tsuyoshi Sugisaki、Kazuo Tsutsui (1.Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2004.P8-10L

▲