[P9-5] Characterization of GaInP/GaAs triple barrier resonant tunneling diodes fabricated by fast atom beam etching process

M. Fukumitsu、H. Horie、N. Asaoka、M. Suhara、T. Okumura (1.Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University)

https://doi.org/10.7567/SSDM.2004.P9-5