[A-1-4] Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics

Ryosuke Iijima、Mariko Takayanagi、Takeshi Yamaguchi、Masato Koyama、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation、2.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.2005.A-1-4