[A-1-5] Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs

Hiroyuki Ota, Arito Ogawa, Masaru Kadoshima, Kunihiko Iwamoto, Wataru Mizubayashi, Kenji Okada, Toshihide Nabatame, Hideki Satake, Akira Toriumi (1.MIRAI-ASRC, AIST, 2.MIRAI-ASET, AIST, 3.The University of Tokyo)

https://doi.org/10.7567/SSDM.2005.A-1-5