Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics

B. H. Lee; R. Choi; S.C. Song; J. Sim; C.D. Young; G. Bersuker; H.K. Park; H. Hwang

doi:https://doi.org/10.7567/SSDM.2005.A-2-1

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[A-2-1] Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics

B. H. Lee, R. Choi, S.C. Song, J. Sim, C.D. Young, G. Bersuker, H.K. Park, H. Hwang (1.SEMATECH, 2.IBM assignee, 3.Gwangju Institute of Science and Technology)

https://doi.org/10.7567/SSDM.2005.A-2-1

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